Characterization of the a-Si:H/c-Si interface by capacitance spectroscopy measurements: modeling and experiments - Archive ouverte HAL
Conference Papers Year : 2011

Characterization of the a-Si:H/c-Si interface by capacitance spectroscopy measurements: modeling and experiments

Olga Maslova
  • Function : Author
  • PersonId : 1409633
  • IdRef : 170665097
Laboratoire de génie électrique de Paris
Aurore Brézard
Laboratoire de génie électrique de Paris
CV
Wilfried Favre
  • Function : Author
Laboratoire de génie électrique de Paris
José Alvarez
Laboratoire de génie électrique de Paris
CV
A.S. Gudovskikh
  • Function : Author
E.I Terukov
  • Function : Author
Jean-Paul Kleider
Laboratoire de génie électrique de Paris
CV

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https://centralesupelec.hal.science/hal-00710779

Submitted on : Thursday, June 21, 2012-3:53:42 PM

Last modification on : Tuesday, August 27, 2024-9:36:58 AM

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hal-00710779 , version 1 (21-06-2012)

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  • HAL Id : hal-00710779 , version 1

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Olga Maslova, Aurore Brézard, Wilfried Favre, José Alvarez, A.S. Gudovskikh, et al.. Characterization of the a-Si:H/c-Si interface by capacitance spectroscopy measurements: modeling and experiments. E-MRS Fall Meeting 2011, Sep 2011, Varsovie, Poland. ⟨hal-00710779⟩

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