Characterization of the a-Si:H/c-Si interface by capacitance spectroscopy measurements: modeling and experiments - Archive ouverte HAL Access content directly
Conference Papers Year : 2011

Characterization of the a-Si:H/c-Si interface by capacitance spectroscopy measurements: modeling and experiments

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hal-00710779 , version 1 (21-06-2012)

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  • HAL Id : hal-00710779 , version 1

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Olga Maslova, Aurore Brézard, Wilfried Favre, José Alvarez, A.S. Gudovskikh, et al.. Characterization of the a-Si:H/c-Si interface by capacitance spectroscopy measurements: modeling and experiments. E-MRS Fall Meeting 2011, Sep 2011, Varsovie, Poland. ⟨hal-00710779⟩
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