Electric pulse induced electronic patchwork in the Mott insulator GaTa4Se8 - Archive ouverte HAL Accéder directement au contenu
Pré-Publication, Document De Travail Année : 2012

Electric pulse induced electronic patchwork in the Mott insulator GaTa4Se8

Résumé

Following a recent discovery of the Insulator-to-Metal Transition induced by electric field in GaTa4Se8, we performed a detailed Scanning Tunneling Microscopy/Spectroscopy study of both pristine (insulating) and transited (conducting) crystals of this narrow gap Mott insulator. The spectroscopic maps show that pristine samples are spatially homogeneous insulators while the transited samples reveal at nanometer scale a complex electronic pattern that consists of metallic and superinsulating patches immersed in the pristine insulating matrix. Surprisingly, both kinds of patches are accompanied by a strong local topographic inflation, thus evidencing for a strong electron-lattice coupling involved in this metal-insulator transition. Finally, using a strong electric field generated across the STM tunneling junction, we demonstrate the possibility to trig the metal-insulator transition locally even at room temperature.
Fichier principal
Vignette du fichier
Spectro_GaTa4Se8_v5.pdf (1.51 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-00698631 , version 1 (18-05-2012)

Identifiants

  • HAL Id : hal-00698631 , version 1

Citer

Vincent Dubost, Tristan Cren, François Debontridder, Dimitri Roditchev, C. Vaju, et al.. Electric pulse induced electronic patchwork in the Mott insulator GaTa4Se8. 2012. ⟨hal-00698631⟩
425 Consultations
195 Téléchargements

Partager

Gmail Facebook X LinkedIn More