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                <term xml:lang="en">thin films</term>
                <term xml:lang="en">nitrides</term>
                <term xml:lang="en">Perovskites</term>
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              <p>LaTiO&lt;sub&gt;x&lt;/sub&gt;N&lt;sub&gt;y&lt;/sub&gt; thin films have been deposited by RF sputtering on (001) Nb-doped SrTiO&lt;sub&gt;3&lt;/sub&gt; and (001) MgO single-crystalline substrates at high temperature (TS = 800 °C) under different nitrogen ratios in the plasma (vol.% N&lt;sub&gt;2&lt;/sub&gt; = 0, 25, 71). The band gaps ranged from Eg = 3.30 eV for the epitaxial transparent film containing no nitrogen to Eg = 2.65 eV for the textured coloured film containing a moderate amount of nitrogen. Dielectric characterization in the frequency range [100 Hz-1 MHz], using a metal-insulator-metal structure, has shown a stable permittivity and loss tangent of the epitaxial low-nitrided LaTiO&lt;sub&gt;x&lt;/sub&gt;N&lt;sub&gt;y&lt;/sub&gt; film with values of ε′ = 135 and tanδ = 1.2 10− 2 at 100 kHz (RT).</p>
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