%0 Journal Article
%T Dielectric oxynitride LaTiOxNy thin films deposited by reactive radio-frequency sputtering
%+ Institut d'Electronique et de Télécommunications de Rennes (IETR)
%+ Unité de Dynamique et Structure des Matériaux Moléculaires (UDSMM)
%+ Institut des Sciences Chimiques de Rennes (ISCR)
%+ Laboratoire d'Etude des Matériaux et des Composants pour l'Electronique (LEMCEL)
%A Ziani, Ahmed
%A Le Paven-Thivet, Claire
%A Fasquelle, Didier
%A Le Gendre, Laurent
%A Benzerga, Ratiba
%A Tessier, Franck
%A Cheviré, François
%A Carru, Jean-Claude
%A Sharaiha, Ala
%< avec comité de lecture
%@ 0040-6090
%J Thin Solid Films
%I Elsevier
%V 520
%N 14
%P 4536-4540
%8 2012
%D 2012
%R 10.1016/j.tsf.2011.10.192
%K permittivity
%K epitaxy
%K sputtering
%K Perovskites
%K nitrides
%K thin films
%Z Chemical Sciences/Material chemistryJournal articles
%X LaTiOxNy thin films have been deposited by RF sputtering on (001) Nb-doped SrTiO3 and (001) MgO single-crystalline substrates at high temperature (TS = 800 °C) under different nitrogen ratios in the plasma (vol.% N2 = 0, 25, 71). The band gaps ranged from Eg = 3.30 eV for the epitaxial transparent film containing no nitrogen to Eg = 2.65 eV for the textured coloured film containing a moderate amount of nitrogen. Dielectric characterization in the frequency range [100 Hz-1 MHz], using a metal-insulator-metal structure, has shown a stable permittivity and loss tangent of the epitaxial low-nitrided LaTiOxNy film with values of ε′ = 135 and tanδ = 1.2 10− 2 at 100 kHz (RT).
%G English
%L hal-00693204
%U https://hal.science/hal-00693204
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