%0 Journal Article %T Dielectric oxynitride LaTiOxNy thin films deposited by reactive radio-frequency sputtering %+ Institut d'Electronique et de Télécommunications de Rennes (IETR) %+ Unité de Dynamique et Structure des Matériaux Moléculaires (UDSMM) %+ Institut des Sciences Chimiques de Rennes (ISCR) %+ Laboratoire d'Etude des Matériaux et des Composants pour l'Electronique (LEMCEL) %A Ziani, Ahmed %A Le Paven-Thivet, Claire %A Fasquelle, Didier %A Le Gendre, Laurent %A Benzerga, Ratiba %A Tessier, Franck %A Cheviré, François %A Carru, Jean-Claude %A Sharaiha, Ala %< avec comité de lecture %@ 0040-6090 %J Thin Solid Films %I Elsevier %V 520 %N 14 %P 4536-4540 %8 2012 %D 2012 %R 10.1016/j.tsf.2011.10.192 %K permittivity %K epitaxy %K sputtering %K Perovskites %K nitrides %K thin films %Z Chemical Sciences/Material chemistryJournal articles %X LaTiOxNy thin films have been deposited by RF sputtering on (001) Nb-doped SrTiO3 and (001) MgO single-crystalline substrates at high temperature (TS = 800 °C) under different nitrogen ratios in the plasma (vol.% N2 = 0, 25, 71). The band gaps ranged from Eg = 3.30 eV for the epitaxial transparent film containing no nitrogen to Eg = 2.65 eV for the textured coloured film containing a moderate amount of nitrogen. Dielectric characterization in the frequency range [100 Hz-1 MHz], using a metal-insulator-metal structure, has shown a stable permittivity and loss tangent of the epitaxial low-nitrided LaTiOxNy film with values of ε′ = 135 and tanδ = 1.2 10− 2 at 100 kHz (RT). %G English %L hal-00693204 %U https://hal.science/hal-00693204 %~ SUPELEC %~ UNIV-RENNES1 %~ CNRS %~ UNIV-LITTORAL %~ INSA-RENNES %~ ENSC-RENNES %~ IETR %~ ISCR %~ SCR_VC %~ IETR_MF %~ SCR_CTI %~ UR1-SPM %~ INC-CNRS %~ UR1-UFR-SPM %~ UR1-HAL %~ UR1-MATH-STIC %~ UR1-SDLM %~ UR1-SDLMJONCH %~ UR1-UFR-ISTIC %~ IETR-CUTE %~ IETR-FUNMAT %~ IVER %~ IETR-ADH %~ TEST-UNIV-RENNES %~ TEST-UR-CSS %~ UNIV-RENNES %~ UNIV-LILLE %~ INSA-GROUPE %~ UR1-MATH-NUM %~ UR1-MMS %~ UDSMM %~ IETR-STAR %~ TEST2-HALCNRS