Single ZnO Nanowire/p-type GaN Heterojunctions for Photovoltaic Devices and UV Light-Emitting Diodes - Archive ouverte HAL Access content directly
Journal Articles Advanced Materials Year : 2010

Single ZnO Nanowire/p-type GaN Heterojunctions for Photovoltaic Devices and UV Light-Emitting Diodes

Ya-Qing Bie
  • Function : Author
Zhi-Min Liao
  • Function : Author
Peng-Wei Wang
  • Function : Author
Yong-Bo Zhou
  • Function : Author
Xiao-Bing Han
  • Function : Author
Yu Ye
  • Function : Author
Qing Zhao
  • Function : Author
Xiao-Song Wu
  • Function : Author
Lun Dai
  • Function : Author
Jun Xu
Li-Wen Sang
  • Function : Author
Jun-Jing Deng
  • Function : Author
K. Laurent
  • Function : Author
Da-Peng Yu
  • Function : Author

Abstract

We fabricate heterojunctions consisting of a single n-type ZnO nanowire and a p-type GaN film. The photovoltaic effect of heterojunctions exhibits open-circuit voltages ranging from 2 to 2.7 V, and a maximum output power reaching 80 nW. Light-emitting diodes with UV electroluminescence based on the heterojunctions are demonstrated.

Dates and versions

hal-00693186 , version 1 (02-05-2012)

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Cite

Ya-Qing Bie, Zhi-Min Liao, Peng-Wei Wang, Yong-Bo Zhou, Xiao-Bing Han, et al.. Single ZnO Nanowire/p-type GaN Heterojunctions for Photovoltaic Devices and UV Light-Emitting Diodes. Advanced Materials, 2010, 22 (38), pp.4284--+. ⟨10.1002/adma.201000985⟩. ⟨hal-00693186⟩
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