X-ray study of antiphase domains and their stability in MBE grown GaP on Si. - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Crystal Growth Année : 2011

X-ray study of antiphase domains and their stability in MBE grown GaP on Si.

Résumé

90 and 20 nm thick GaP layers on Si substrate grown by various MBE growth modes are studied. A complete analysis is performed using AFM, TEM imaging and X-ray diffraction giving crucial information on structural defects properties and here particularly on antiphase domains. Thermodynamic evolution of antiphase boundaries is then discussed.

Domaines

Matériaux

Dates et versions

hal-00692315 , version 1 (29-04-2012)

Identifiants

Citer

A. Letoublon, Weiming Guo, C. Cornet, Alexandre Boulle, M. Veron, et al.. X-ray study of antiphase domains and their stability in MBE grown GaP on Si.. Journal of Crystal Growth, 2011, Proceedings of the 16th International Conference on Molecular Beam Epitaxy (ICMBE), 323 (1), pp.409-412. ⟨10.1016/j.jcrysgro.2010.10.137⟩. ⟨hal-00692315⟩
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