Study of the stability of 3C-SiC single crystals using high resolution diffuse X-ray scattering
Résumé
The stability of (001)‐oriented 3C silicon carbide crystals is studied by a method coupling high resolution x‐ray diffraction and numerical simulations. The analysis of the diffuse scattering intensity distribution along selected directions in reciprocal space allows us to obtain qualitative and quantitative informations regarding the 3C‐6H transition. Our latest results concerning the influence of the initial crystal quality (presence of defects) and of annealing time on the 3C‐6H transition are presented in this article.