Chemically Amplified Photoresists for 193-Nm Photolithography: Effect of Molecular Structure and Photonic Parameters on Photopatterning - Archive ouverte HAL Access content directly
Journal Articles Journal of Polymer Science Part A: Polymer Chemistry Year : 2010

Chemically Amplified Photoresists for 193-Nm Photolithography: Effect of Molecular Structure and Photonic Parameters on Photopatterning

Abstract

Next generations of microelectronic devices request further miniaturized systems. In this context, photolithography is a key step and many efforts have been paid to develop new irradiation setup and materials compatible with sub-100 nm resolution. Among other resist platforms, chemically amplified photoresists (CAR) are widely used because of their excellent properties in terms of resolution, sensitivity, and etching resistance. However, low information on the impact of the polymer structure on the lithography performance is available. CAR with well-controlled polymer structures were thus prepared and investigated. In particular, the impact of the polymer structure on the lithographic performance was evaluated. Linear and branched polymers with various molecular weights and polyclispersities were compared. We focused on the dependency of the photosensitivity of the resist with the structural parameters. These results allow further understanding the fundamental phenomena involved by 193-nm irradiation.

Dates and versions

hal-00679919 , version 1 (16-03-2012)

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Hassan Ridaoui, Ali Dirani, Olivier Soppera, Esma Ismailova, Cyril Brochon, et al.. Chemically Amplified Photoresists for 193-Nm Photolithography: Effect of Molecular Structure and Photonic Parameters on Photopatterning. Journal of Polymer Science Part A: Polymer Chemistry, 2010, 48 (6), pp.1271-1277. ⟨10.1002/pola.23866⟩. ⟨hal-00679919⟩
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