In this paper, simulation and modeling results for a npn SiGe spike mono emitter transistor are presented covering both DC and frequency operations. First, the results obtained for a SiGe spike emitter are compared with the conventional HBT. Then model parameter extraction with the help of HICUM model is performed in the simulated data for the new device. The accurate compact modeling introduces a new recombination time constant parameter inside the existing HICUML2.24 model. Modeling results with the extended model indicate a good agreement not only in DC characteristics but also in dynamic behavior. © 2011 IEEE.