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Communication Dans Un Congrès Année : 2011

Electro-thermal dynamic simulation and thermal spreading impedance modeling of Si-Ge HBTs

Résumé

In this paper, a new and simple approach simulating electro-thermal dynamic behaviour of Heterojunction Bipolar Transistors (HBTs) has been demonstrated. Time domain junction temperature variations at different frequency and, therefore, thermal spreading impedance have been obtained numerically by means of 3D device simulations and which has been verified through low frequency scattering parameter measurements for different geometry of transistors. A physical electro-thermal recursive network has been employed for HiCuM compact model simulation and thermal parameters extraction. © 2011 IEEE.
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Dates et versions

hal-00669443 , version 1 (13-02-2012)

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Kumar Sahoo Amit, Sebastien Fregonese, Mario Weib, Nathalie Malbert, Thomas Zimmer. Electro-thermal dynamic simulation and thermal spreading impedance modeling of Si-Ge HBTs. 25th IEEE Bipolar/BiCMOS Technology and Circuits Meeting, BCTM 2011, Oct 2011, ATLANTA, United States. art. no. 6082746, pp. 45-48, ⟨10.1109/BCTM.2011.6082746⟩. ⟨hal-00669443⟩
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