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Journal Articles Optics Express Year : 2011

3D knife-edge characterization of two-photon absorption volume in silicon for integrated circuit testing

Abstract

We have performed three-dimensional characterization of the TPA effective laser spot size in silicon using an integrated knife-edge sensor. The TPA-induced response of a CMOS integrated circuit is analyzed based on these results and compared to simulation; we have found that the charge injection capacity in IC's active layer could be influenced by irradiance energy and focus depth.
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Dates and versions

hal-00667432 , version 1 (07-02-2012)

Identifiers

  • HAL Id : hal-00667432 , version 1

Cite

Kai Shao, Adèle Morisset, V. Pouget, Emeric Faraud, Camille Larue, et al.. 3D knife-edge characterization of two-photon absorption volume in silicon for integrated circuit testing. Optics Express, 2011, 19 (23), pp.22594-22599. ⟨hal-00667432⟩
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