Investigation of single event burnout sensitive depth in power MOSFETS
Abstract
The depth of the Single-event burnout sensitive volume of power MOSFETs is investigated using TCAD simulation and TPA laser testing approaches.
Frédéric Darracq : Connect in order to contact the contributor
https://hal.science/hal-00667364
Submitted on : Tuesday, February 7, 2012-2:54:05 PM
Last modification on : Friday, March 24, 2023-2:52:55 PM