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Conference Papers Year : 2009

Investigation of single event burnout sensitive depth in power MOSFETS

Abstract

The depth of the Single-event burnout sensitive volume of power MOSFETs is investigated using TCAD simulation and TPA laser testing approaches.
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Dates and versions

hal-00667364 , version 1 (07-02-2012)

Identifiers

  • HAL Id : hal-00667364 , version 1

Cite

Frédéric Darracq, V. Pouget, D. Lewis, P. Fouillat, E. Lorfèvre, et al.. Investigation of single event burnout sensitive depth in power MOSFETS. 2009 European Conference on Radiation and Its Effects on Components and Systems (RADECS),, Sep 2009, Bruges, Belgium. pp.106 - 111. ⟨hal-00667364⟩
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