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Article Dans Une Revue Nanoscience and Nanotechnology Letters Année : 2011

Epitaxial Graphene Growth on alpha-SiC: Probing the Effect of Surface Orientation

Benoit Jouault
Antoine Tiberj
Jean Camassel
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Résumé

We review the results of growing few layer graphene on alpha-SiC with different surface orientations. To this end we have used successively a pure {000-1} C face, a 8 degrees-off one, a nonpolar {11-20} surface and, finally, a 8 degrees-off Si face and a pure (exactly {0001}-oriented) Si one. Without any need for complex hydrogen annealing, we have shown that a pure C or a 8 degrees-off C or even a pure {11-20} surface allows the growth of single layer epitaxial graphene sheets that are strain-free, p-type, low doped and exhibit reasonably high carrier mobility. This is not the case on pure Si or 8 degrees-off Si faces on which strained material is constantly found with heavy n-type doping and low carrier mobility.
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Dates et versions

hal-00666151 , version 1 (03-02-2012)

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Nicolas Camara, Benoit Jouault, A. Caboni, Antoine Tiberj, P. Godignon, et al.. Epitaxial Graphene Growth on alpha-SiC: Probing the Effect of Surface Orientation. Nanoscience and Nanotechnology Letters, 2011, 3, pp.49-54. ⟨10.1166/nnl.2011.1118⟩. ⟨hal-00666151⟩
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