About the internal pressure in cavities derived from implantation-induced blistering in semi-conductors. - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Applied Physics Année : 2011

About the internal pressure in cavities derived from implantation-induced blistering in semi-conductors.

G. Parry
C. Coupeau
M.-L. David
J. Colin
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Résumé

Silicon and germanium wafers were implanted with hydrogen at high fluence and then submitted to thermal treatment at low temperature. By means of atomic force microscopy observations and finite elements simulations, the internal pressure under the resulting blisters appearing onto the surface has been determined. It is found that the internal pressure could be strongly overestimated from calculation if the internal compressive stresses in the implanted layers are neglected and/or incorrect boundary conditions are used. (C) 2011 American Institute of Physics. ]

Domaines

Matériaux
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Dates et versions

hal-00664729 , version 1 (31-01-2012)

Identifiants

Citer

G. Parry, C. Coupeau, E. Dion, M.-L. David, J. Colin, et al.. About the internal pressure in cavities derived from implantation-induced blistering in semi-conductors.. Journal of Applied Physics, 2011, 110 (11), ⟨10.1063/1.3664741⟩. ⟨hal-00664729⟩
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