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Article Dans Une Revue Journal of Micromechanics and Microengineering Année : 2011

Alternating SiCl4/O2 passivation steps with SF6 etch steps for silicon deep etching

Résumé

Deep etching of silicon has been investigated in an inductively coupled plasma etch reactor using short SiCl4/O2 plasma steps to passivate the sidewalls of the etched structures. A study was first carried out to define the appropriate parameters to create, at a substrate temperature of −20 ◦C, a passivation layer by SiCl4/O2 plasma that resists lateral chemical etching in SF6 plasma. The most efficient passivation layer was obtained for a SiCl4/O2 gas flow ratio of 2:1, a pressure of 1 Pa and a source power of 1000 W. Ex situ analyses on a film deposited with these parameters show that it is very rich in oxygen. Silicon etching processes that alternate SF6 plasma etch steps with SiCl4/O2 plasma passivation steps were then developed. Preliminary tests in pulsed-mode conditions have enabled etch rates greater than 2 μmmin−1 with selectivities higher than 220. These results show that it is possible to develop a silicon deep etching process at substrate temperatures around −20 ◦C that uses low SiCl4 and O2 gas flows instead of conventional fluorocarbon gases for sidewall protection.
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Dates et versions

hal-00655003 , version 1 (24-12-2011)

Identifiants

  • HAL Id : hal-00655003 , version 1

Citer

Corinne Y. Duluard, Pierre Ranson, Laurianne E. Pichon, Jeremy Pereira, El-Houcine Oubensaid, et al.. Alternating SiCl4/O2 passivation steps with SF6 etch steps for silicon deep etching. Journal of Micromechanics and Microengineering, 2011, 21, pp.065015. ⟨hal-00655003⟩
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