Anisotropic Vapor HF etching of silicon dioxide for Si microstructure release - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Microelectronic Engineering Année : 2012

Anisotropic Vapor HF etching of silicon dioxide for Si microstructure release

Résumé

Damages are created in a sacrificial layer of silicon dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch rate ratio between implanted and unimplanted silicon dioxide is more than 150 in vapor hydrofluoric acid (VHF). This feature is of interest to greatly reduce the underetch of microelectromechanical systems anchors. Based on the experimentally extracted etch rate of unimplanted and implanted silicon dioxide, the patterning of the sacrificial layer can be predicted by simulation.
Fichier principal
Vignette du fichier
Anisotropic_VHF_etching_of_SiO2.pdf (775.97 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-00643499 , version 1 (07-02-2012)

Identifiants

Citer

Vikram Passi, Ulf Sodervall, Bengt Nilsson, Goran Petersson, Mats Hagberg, et al.. Anisotropic Vapor HF etching of silicon dioxide for Si microstructure release. Microelectronic Engineering, 2012, 95, pp.83-89. ⟨10.1016/j.mee.2012.01.005⟩. ⟨hal-00643499⟩
209 Consultations
712 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More