Bulk Dislocation Core Dissociation Probed by Coherent X Rays in Silicon - Archive ouverte HAL
Article Dans Une Revue Physical Review Letters Année : 2011

Bulk Dislocation Core Dissociation Probed by Coherent X Rays in Silicon

Résumé

We report on a new approach to probe bulk dislocations by using coherent x-ray diffraction. Coherent x rays are particularly suited for bulk dislocation studies because lattice phase shifts in condensed matter induce typical diffraction patterns which strongly depend on the fine structure of the dislocation cores. The strength of the method is demonstrated by performing coherent diffraction of a single dislocation loop in silicon. A dissociation of a bulk dislocation is measured and proves to be unusually large compared to surface dislocation dissociations. This work opens a route for the study of dislocation cores in the bulk in a static or dynamical regime, and under various external constraints

Domaines

Matériaux
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Dates et versions

hal-00640187 , version 1 (10-11-2011)

Identifiants

Citer

V.L.R. Jacques, S. Ravy, D. Le Bolloc'H, E. Pinsolle, M. Sauvage-Simkin, et al.. Bulk Dislocation Core Dissociation Probed by Coherent X Rays in Silicon. Physical Review Letters, 2011, 106 (6), ⟨10.1103/PhysRevLett.106.065502⟩. ⟨hal-00640187⟩
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