Low-noise microwave performance of AlN/GaN HEMTs grown on silicon substrate - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Electron Device Letters Année : 2011

Low-noise microwave performance of AlN/GaN HEMTs grown on silicon substrate

Résumé

Microwave noise performance of state-of-the-art AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100-mm Si substrate has been investigated. DC and RF measurements show the outstanding potential of this structure for high-power millimeter-wave (mmW) applications. A maximum output current density of about 2 A/mm, together with a low gate leakage current, and a record GaN-on-Si extrinsic transconductance above 600 mS/mm are demonstrated. The current gain cutoff frequency fT and the maximum oscillation frequency fmax were 85 and 103 GHz, respectively, with a 0.16-μm gate length. At VDS = 4 V, the device exhibits a minimum noise figure (NFmin) of 1 dB (1.8 dB) with an associated gain (GA) of 12 dB (10 dB) at 10 GHz (18 GHz) favorably comparable to the best reported GaN-on-Si HEMTs. These results show that AlN/GaN HEMTs grown on silicon substrate are promising for the integration of cost effective, low noise, and high power mmW amplifiers.
Fichier non déposé

Dates et versions

hal-00639806 , version 1 (10-11-2011)

Identifiants

Citer

F Medjdoub, Nicolas Waldhoff, Malek Zegaoui, B. Grimbert, N. Rolland, et al.. Low-noise microwave performance of AlN/GaN HEMTs grown on silicon substrate. IEEE Electron Device Letters, 2011, 32 (9), pp.1230-1232. ⟨10.1109/LED.2011.2161261⟩. ⟨hal-00639806⟩
32 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More