High-performance low-leakage-current AlN/GaN HEMTs grown on silicon substrate - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Electron Device Letters Année : 2011

High-performance low-leakage-current AlN/GaN HEMTs grown on silicon substrate

Résumé

In this letter, ultrathin-barrier AlN/GaN high-electron mobility transistors (HEMTs) capped with in situ metal-organic-chemical-vapor-deposition- grown SiN have been successfully fabricated on 100-mm Si substrates. Output current density exceeding 2 A/mm has been reached, which represents, to the best of our knowledge, the highest value ever achieved for GaN-on-Si HEMTs. This results from the high 2DEG density of the optimized AlN/GaN heterostructure. Despite the ultrathin barrier of 6 nm, low gate and drain leakage currents of about 10 μA/mm are obtained without the use of a gate dielectric that generally induces reliability issues. Furthermore, the high aspect ratio (gate length Lg/gate-to-channel distance) and low RF losses (at the buffer/Si substrate interface) are reflected in excellent RF performances. The current gain extrinsic cutoff frequency fT and the maximum oscillation frequency f\max were 52 and 102 GHz with a 0.2- μm gate length, respectively, resulting in an fT Lg product as high as the reported state-of-the-art GaN-on-Si HEMTs.
Fichier non déposé

Dates et versions

hal-00639802 , version 1 (10-11-2011)

Identifiants

Citer

F Medjdoub, Malek Zegaoui, Damien Ducatteau, N. Rolland, Paul-Alain Rolland. High-performance low-leakage-current AlN/GaN HEMTs grown on silicon substrate. IEEE Electron Device Letters, 2011, 32 (7), pp.874-876. ⟨10.1109/LED.2011.2138674⟩. ⟨hal-00639802⟩
20 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More