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Communication Dans Un Congrès Année : 2011

MODELING OF POWER SEMICONDUCTORS IN VHDL-AMS FOR EMI SIMULATIONS

Résumé

The static converters are important sources of EMI. In order to reproduce the converters functioning by simulation, a special effort must be provided for the silicon component modeling. In our survey case, these models must be well adapted to the static converters simulation for EMC characterization. In this paper, we have focused on the semiconductor models by providing an IGBT VHDL-AMS model. This work allowed us to evaluate the switching effect on the conducted perturbations in the static converters while keeping a good compromise of accuracy and simulation time.
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Dates et versions

hal-00623285 , version 1 (14-09-2011)

Identifiants

  • HAL Id : hal-00623285 , version 1

Citer

Slim Hrigua, Cyrille Gautier, Bertrand Revol, François Costa. MODELING OF POWER SEMICONDUCTORS IN VHDL-AMS FOR EMI SIMULATIONS. ELECTRIMACS 2011, Jun 2011, Paris, France. ⟨hal-00623285⟩
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