Voltage controlled terahertz transmission through GaN quantum wells - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2011

Voltage controlled terahertz transmission through GaN quantum wells

R. Sharma
  • Function : Author
S. Blin
L. Varani
M. Chmielowska
  • Function : Author
Jp Faurie
  • Function : Author
B. Beaumont
  • Function : Author
P. Shiktorov
  • Function : Author
E. Starikov
  • Function : Author
V. Gruzinskis
  • Function : Author
V. Korotyevyev
  • Function : Author
V. Kochelap
  • Function : Author

Abstract

We report measurements of radiation transmission in the 0.220--0.325 THz frequency domain through GaN quantum wells grown on sapphire substrates at room and low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found. For a deeper understanding of the physical phenomena involved, these results are compared with a phenomenological theory of light transmission under electric bias relating the transmission enhancement to changes in the differential mobility of the two-dimensional electron gas.
Fichier principal
Vignette du fichier
Voltage controlled terahertz transmission through GaN quantum wells -1105.3131.pdf (258.8 Ko) Télécharger le fichier

Dates and versions

hal-00610356 , version 1 (25-05-2021)

Identifiers

Cite

T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, et al.. Voltage controlled terahertz transmission through GaN quantum wells. Applied Physics Letters, 2011, 99 (8), pp.082101. ⟨10.1063/1.3627183⟩. ⟨hal-00610356⟩
80 View
43 Download

Altmetric

Share

Gmail Mastodon Facebook X LinkedIn More