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Article Dans Une Revue Optics Express Année : 2010

Photo-stability of pulsed laser deposited GexAsySe100-x-y amorphous thin films

Résumé

Quest for photo-stable amorphous thin films in ternary GexAsySe100-x-y chalcogenide system is reported. Studied layers were fabricated using pulsed laser deposition technique. Scanning electron microscope with energy dispersive X-ray analyzer, Raman scattering spectroscopy, transmittance measurements, variable angle spectroscopic ellipsometry, and non-linear imaging technique with phase object inside the 4f imaging system were employed to characterize prepared thin films. Their photo-stability/photo-induced phenomena in as-deposited and relaxed states were also investigated, respectively. In linear regime, we found intrinsically photo-stable relaxed layers within Ge20As20Se60 composition. This composition presents also the highest optical damage threshold under non-linear optical conditions.

Domaines

Matériaux

Dates et versions

hal-00608459 , version 1 (13-07-2011)

Identifiants

Citer

P. Nemec, S. Zhang, Virginie Nazabal, K. Fedus, G. Boudebs, et al.. Photo-stability of pulsed laser deposited GexAsySe100-x-y amorphous thin films. Optics Express, 2010, 18 (22), pp.22944-22957. ⟨10.1364/OE.18.022944⟩. ⟨hal-00608459⟩
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