From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices IMW - Archive ouverte HAL Access content directly
Conference Papers Year : 2009

From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices IMW

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Dates and versions

hal-00603820 , version 1 (27-06-2011)

Identifiers

  • HAL Id : hal-00603820 , version 1

Cite

J. Buckley, T. Pro, R. Barattin, A. Calborean, K. Huang, et al.. From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices IMW. to be published (IEEE Conference Proceedings, 2009), May 2009, Monterey, CA, United States. ⟨hal-00603820⟩
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