Comparison of short channel effect between SOI and sSOI triple-gate MOSFETs. - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2009
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hal-00603703 , version 1 (27-06-2011)

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  • HAL Id : hal-00603703 , version 1

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K.-Y. Na, S. Cristoloveanu, Y-H. Bae, W. Xiong, C.R. Cleavelin, et al.. Comparison of short channel effect between SOI and sSOI triple-gate MOSFETs.. Proc. in Silicon-on-Insulator Technology and Devices 14, (Y. Omura, S. Cristoloveanu, F. Gamiz, B-Y. Nguyen eds.), Pennington (USA), ECS Transactions, in press, May 2009, United States. ⟨hal-00603703⟩
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