Optimisation and Simulation of an Alternative nano-flash Memory: the SASEM device
Résumé
Process simulation are performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimise it and to improve the understanding of the dot storage formation. The influence of various parameters (oxidation temperature, nanowire shape) have been investigated.
Origine | Fichiers produits par l'(les) auteur(s) |
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