Dielectric properties at microwaves frequencies of (Ni, Ti, La, Mg)-doped Ba0.3Sr0.7TiO3 thin films deposited on high-resistivity silicon substrates - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of the American Ceramic Society Année : 2011

Dielectric properties at microwaves frequencies of (Ni, Ti, La, Mg)-doped Ba0.3Sr0.7TiO3 thin films deposited on high-resistivity silicon substrates

Freddy Ponchel
Denis Remiens
J. Midy
  • Fonction : Auteur
Jean-François Legier
Caroline Soyer
G. Guegan
  • Fonction : Auteur

Dates et versions

hal-00603030 , version 1 (24-06-2011)

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Freddy Ponchel, Denis Remiens, J. Midy, Jean-François Legier, Caroline Soyer, et al.. Dielectric properties at microwaves frequencies of (Ni, Ti, La, Mg)-doped Ba0.3Sr0.7TiO3 thin films deposited on high-resistivity silicon substrates. Journal of the American Ceramic Society, 2011, 94, pp.1661-1663. ⟨10.1111/j.1551-2916.2011.04546.x⟩. ⟨hal-00603030⟩
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