Atomic scale investigation of silicon nanowires and nanoclusters - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Nanoscale Research Letters Année : 2011

Atomic scale investigation of silicon nanowires and nanoclusters

Résumé

In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant. The concentration and distribution of impurity (gold) and dopant (boron) in SiNW are investigated and discussed. Silicon nanoclusters are produced by thermal annealing of silicon-rich silicon oxide and silica multilayers. In this process, atom probe tomography (APT) provides accurate information on the silicon nanoparticles and the chemistry of the nanolayers.
Fichier principal
Vignette du fichier
2011_Roussel_NRL_271.pdf (845.75 Ko) Télécharger le fichier
Origine : Fichiers éditeurs autorisés sur une archive ouverte
Loading...

Dates et versions

hal-00597078 , version 1 (16-01-2019)

Identifiants

Citer

Manuel Roussel, W.H. Chen, Etienne Talbot, Rodrigue Lardé, E. Cadel, et al.. Atomic scale investigation of silicon nanowires and nanoclusters. Nanoscale Research Letters, 2011, 6, pp.271-1-6. ⟨10.1186/1556-276X-6-271⟩. ⟨hal-00597078⟩
117 Consultations
46 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More