Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates. - Archive ouverte HAL
Article Dans Une Revue Semiconductor Science & Technology Année : 2010

Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates.

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hal-00596336 , version 1 (27-05-2011)

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  • HAL Id : hal-00596336 , version 1

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M. Hartmann, L. Sanchez, W. van den Daele, A. Abadie, L. Baud, et al.. Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates.. Semiconductor Science & Technology, 2010, 25, pp.075010. ⟨hal-00596336⟩
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