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Communication Dans Un Congrès Année : 2011

Low Cost SU8 Based Above IC Process for High-Q RF Power Inductors Integration

Résumé

This paper presents a new process for integration of high-Q RF power inductors above low resistivity silicon substrates. The process uses the SU8 resin as a dielectric layer. The aim of using the SU8 is to form thick dielectric layer that can enhance the performance of the inductors. The flexibility of the process enables the possibility to realize complex shaped planar inductors with various dielectric and metal thicknesses to meet the requirements of the application. Q values of 55 at 5GHz has been demonstrated for an inductance value of 0.8nH using a 60 µm thick SU8 layer and 30 µm thick copper ribbons.
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Dates et versions

hal-00591690 , version 1 (10-05-2011)

Identifiants

  • HAL Id : hal-00591690 , version 1

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Ayad Ghannam, David Bourrier, Christophe Viallon, Thierry Parra. Low Cost SU8 Based Above IC Process for High-Q RF Power Inductors Integration. Mediterranean Conference on Innovative Materials and Applications - CIMA 2011, Mar 2011, Beyrouth, Lebanon. 4p. ⟨hal-00591690⟩
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