Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Applied Physics Année : 2011

Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond

Résumé

Self-heating effects in a molecular beam epitaxy-grown GaN/AlGaN/GaN structure on a single crystalline diamond is investigated. A transient interferometric method, in combination with a three dimensional model, is used to describe a pulsed operation of a transistor-like heater, and a micro-Raman technique is used in a steady state. Good agreement is found between the techniques. The thermal conductivity of the diamond is found to be 2200 W/m K, and the thermal boundary resistance to the III-N epi-structure is < 1 × 10−8 m2 K/W. The excellent cooling efficiency of the diamond is manifested by the fast saturation of the temperature at 1 μs and by a record low normalized thermal resistance of 3.5 K mm/W.

Domaines

Electronique
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Dates et versions

hal-00591315 , version 1 (25-05-2022)

Identifiants

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J. Kuzmik, S. Bychikhin, D. Pogany, E. Pichonat, O. Lancry, et al.. Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond. Journal of Applied Physics, 2011, 109 (8), pp.086106. ⟨10.1063/1.3581032⟩. ⟨hal-00591315⟩
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