Frequency Scalable Model for MEMS Capacitive Shunt Switches at Millimeter Wave Frequencies

This paper presents an approach to RF MEMS capacitive shunt switch design from K band up to W-band, based on the scalability of the RF MEMS switch with frequency. The parameters of the switch's equivalent circuit model also follow scaling rules. The measurement results of the fabricated switches show an excellent agreement with simulations which allow to validate the MEMS model in the entire band from 20 GHz up to 94 GHz. This model is going to be used in phase shifter circuit design for antenna array applications. First 60 GHz phase shifter results are also reported here.

Mots clés

Modeling RF-MEMS Capacitive Shunt Switches Phase Shifters Modeling.

Domaines

Micro et nanotechnologies/Microélectronique

Fichier principal

IEEE_MTT_final.pdf (788.9 Ko)

Origine	Fichiers produits par l'(les) auteur(s)

Daniela Dragomirescu : Connectez-vous pour contacter le contributeur

https://hal.science/hal-00591017

Soumis le : vendredi 6 mai 2011-09:29:55

Dernière modification le : lundi 20 novembre 2023-11:44:22

Archivage à long terme le : dimanche 4 décembre 2016-02:58:10

Dates et versions

hal-00591017 , version 1 (06-05-2011)

Identifiants

HAL Id : hal-00591017 , version 1

Citer

Vincent Puyal, Daniela Dragomirescu, Christina Villeneuve-Faure, Jinyu Jason Ruan, Patrick Pons, et al.. Frequency Scalable Model for MEMS Capacitive Shunt Switches at Millimeter Wave Frequencies. IEEE Transactions on Microwave Theory and Techniques, 2009, 57 (11), p.2824-2833. ⟨hal-00591017⟩

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