Epitaxial Growth and Electrical Properties of Thick SmSi2 Layers on (001) Silicon - Archive ouverte HAL Access content directly
Journal Articles Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes Year : 2010

Epitaxial Growth and Electrical Properties of Thick SmSi2 Layers on (001) Silicon

Natalie O.V. Plank
  • Function : Author
Bart M. Ludbroo
  • Function : Author
Thom Minnee
  • Function : Author
Ben. J. Ruck
  • Function : Author
H. J. Trodahl
  • Function : Author
John V. Kennedy
  • Function : Author

Abstract

We report on the growth of thick (up to 1.2 µm) epitaxial samarium disilicide layers on (001) oriented silicon substrates. The films have the bulk tetragonal SmSi2 structure and composition, and grow with a preferential orientation SmSi2[100] ∥ Si[110]. A surface reconstruction transition from (1×1) to (2×2) appears below ∼525 °C. Transport measurements show an n-type metallic conduction with a room temperature resistivity of 175 µΩ cm decreasing to 85 µΩ cm at 4 K, and a carrier concentration of 1.3 ×1022 cm-3.

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Materials
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hal-00585566 , version 1 (13-04-2011)

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Franck Natali, Natalie O.V. Plank, Bart M. Ludbroo, Jan Richter, Thom Minnee, et al.. Epitaxial Growth and Electrical Properties of Thick SmSi2 Layers on (001) Silicon. Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2010, 49, 025505 (3 p.). ⟨10.1143/JJAP.49.025505⟩. ⟨hal-00585566⟩
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