Failure Analysis of IGBT under High Temperature, High Current Density and High Switching Speed. Step 3: Clarification of SOA
Résumé
To investigate the SOA, we will focus on three objectives as follows: - the failure under short circuit by considering the current and voltage waveforms, the locus, the internal device analysis and the failure mechanism identification - the failure under clamped inductive load by considering the current and voltage waveforms, the locus, the internal device analysis and the failure mechanism identification - the identification of the parameters limiting the device operation and which should be considered to improve the SOA of the IGBT