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Rapport Année : 2011

Failure Analysis of IGBT under High Temperature, High Current Density and High Switching Speed. Step 2 : IGBT modelling

Résumé

The objectives of this revised interim report of step 2 are to illustrate the final simulations and fitting of the Trench IGBT model.
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Dates et versions

hal-00584189 , version 1 (07-04-2011)

Identifiants

  • HAL Id : hal-00584189 , version 1

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Stephane Azzopardi, Adel Benmansour, J.-C. Martin. Failure Analysis of IGBT under High Temperature, High Current Density and High Switching Speed. Step 2 : IGBT modelling. 2011. ⟨hal-00584189⟩
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