Low temperature Trench IGBT static and dynamic operating modes investigation based on simulation and experiments
Résumé
The objectives of this study were to investigate the low temperature Trench IGBT behavior based on simulations and experiments. On one hand, the goal was to focus on the simulations at low temperature of Trench IGBT using the physically based 2D device simulator from ISE. The basic simulation file was provided by Toyota CRDL. By low temperature, it means a value down to -40°C. On another hand, in addition to simulations, experiments have been carried. The relationship between experiments and simulations permitted to evaluate to behavior of the device at low temperature by pointing out the trends. In each case, static and switching analyses have been studied.
Domaines
Energie électrique
Origine : Fichiers produits par l'(les) auteur(s)
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