Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs and 4H-SiC semiconductors under light illumination at cryogenic temperatures - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Applied Physics Année : 2010

Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs and 4H-SiC semiconductors under light illumination at cryogenic temperatures

David Mouneyrac
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Jean-Michel Le Floch
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Dominique Cros

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hal-00584063 , version 1 (07-04-2011)

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David Mouneyrac, J.G. Harnett, Jean-Michel Le Floch, M.E. Tobar, Dominique Cros, et al.. Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs and 4H-SiC semiconductors under light illumination at cryogenic temperatures. Journal of Applied Physics, 2010, 108 (10), pp.104107. ⟨10.1063/1.3514009⟩. ⟨hal-00584063⟩

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