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Article Dans Une Revue Applied Physics Letters Année : 2011

Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width

Résumé

The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for nonsegregated contacts separated by micrometer-sized gaps. Still, an excess of current occurs at low temperature for short contact separations or dopant-segregated contacts when the voltage applied to the device is sufficiently high. From two-dimensional self-consistent nonequilibrium Green’s function simulations, the dependence of the Schottky barrier profile on the applied voltage, unaccounted for in usual thermionic-field emission models, is found to be the source of this deviation
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hal-00579075 , version 1 (27-05-2022)

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N. Reckinger, Xing Tang, Emmanuel Dubois, G. Larrieu, D. Flandre, et al.. Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width. Applied Physics Letters, 2011, 98 (11), pp.1121021. ⟨10.1063/1.3567546⟩. ⟨hal-00579075⟩
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