Complete optical characterization of multilayered InxGa1-xN/GaN structures grown by MOCVD on sapphire substrates - Archive ouverte HAL Access content directly
Conference Papers Year : 2009

Complete optical characterization of multilayered InxGa1-xN/GaN structures grown by MOCVD on sapphire substrates

A. Gokarna
  • Function : Author
A. Stolz
El Hadj Dogheche
J. Teng
  • Function : Author
W. Liu
  • Function : Author
S.J. Chua
  • Function : Author
E. Dumont
  • Function : Author
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Dates and versions

hal-00575300 , version 1 (10-03-2011)

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  • HAL Id : hal-00575300 , version 1

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A. Gokarna, A. Stolz, El Hadj Dogheche, Didier Decoster, J. Teng, et al.. Complete optical characterization of multilayered InxGa1-xN/GaN structures grown by MOCVD on sapphire substrates. 5th International Conference for Materials Advanced Technologies, ICMAT 2009, Symposium O: Compound Semiconductor Photonics: Materials, Devices and Integration, 2009, _, France. ⟨hal-00575300⟩
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