Conference Papers
Year : 2010
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https://hal.science/hal-00574426
Submitted on : Tuesday, March 8, 2011-9:40:56 AM
Last modification on : Friday, March 24, 2023-2:52:54 PM
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- HAL Id : hal-00574426 , version 1
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A. Soltani, Abdelkrim Talbi, V. Mortet, A. Bassam, A. Oussous, et al.. Improvement of AlN SAW performance by introduction of TiN nucleation layer on silicon substrate. 15th International Hasselt Diamond Workshop, SBDD XV, 2010, Hasselt, Belgium. ⟨hal-00574426⟩
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