Strain dependence of the direct energy bandgap in thin silicon on insulator layers
Résumé
Photoreflectance spectroscopy is applied on tensilely-strained silicon on insulator (sSOI) thin layers in order to evaluate the biaxial strain effect on the Si direct bandgap. The measured redshift of the transition (i.e. direct bandgap) with strain (∼ -100 meV/%), corresponds to theoretical predictions. The hydrostatic and valence band deformation potential parameters for E 1 (i.e. transition close to L-point along the Λ-direction) are also measured: and ' 0 E eV D 5. 0 5 . 7 1 1 ± − = eV D 1 8. 3 3 3 ± =.
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PEER_stage2_10.1088%2F0022-3727%2F43%2F25%2F255401.pdf (188.54 Ko)
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