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Article Dans Une Revue Journal of Physics D: Applied Physics Année : 2010

On the deactivation of the dopant and electronic structure in reactively sputtered transparent Al-doped ZnO thin films

David Horwat
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Maud Jullien
Fabien Capon
Jean-François Pierson

Résumé

We report on a possible origin of electrical heterogeneities in 4 at% Al doped ZnO (AZO) reactively sputtered films. It is found through Zn L 3 and Al K edge X-ray absorption near edge structure (XANES) that a fraction of the Al dopant is deactivated by its positioning in octahedral conformation with oxygen. This fraction as well as the conductivity, optical bandgap and c-axis parameter of ZnO wurtzite are all found to depend on the sample position during deposition. The present results suggest the formation of a metastable Al 2 O 3 (ZnO) m homologous phase that degrades the electrical conductivity. Transparent conducting oxides (TCOs) characterized by both high transparency in the visible range and high electrical conductivity are key materials for devices such

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Dates et versions

hal-00569420 , version 1 (25-02-2011)

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David Horwat, Maud Jullien, Fabien Capon, Jean-François Pierson, Joakim Andersson, et al.. On the deactivation of the dopant and electronic structure in reactively sputtered transparent Al-doped ZnO thin films. Journal of Physics D: Applied Physics, 2010, 43 (13), pp.132003. ⟨10.1088/0022-3727/43/13/132003⟩. ⟨hal-00569420⟩
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