The importance of surface charge effects in InGaAs/AlInAs three-terminal ballistic switches in the THz regime - Archive ouverte HAL
Communication Dans Un Congrès Année : 2010

The importance of surface charge effects in InGaAs/AlInAs three-terminal ballistic switches in the THz regime

T. Sadi
  • Fonction : Auteur
Jean-Luc Thobel
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Dates et versions

hal-00568966 , version 1 (24-02-2011)

Identifiants

  • HAL Id : hal-00568966 , version 1

Citer

T. Sadi, Jean-Luc Thobel, F. Dessenne. The importance of surface charge effects in InGaAs/AlInAs three-terminal ballistic switches in the THz regime. 34th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, WOCSDICE 2010, 2010, Germany. pp.85-86. ⟨hal-00568966⟩
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