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Article Dans Une Revue IEEE Transactions on Microwave Theory and Techniques Année : 2010

Microwave Power Limiting Devices Based on the Semiconductor-Metal Transition in Vanadium-Dioxide Thin Films

Julien Givernaud
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Aurelian Crunteanu
Arnaud Pothier
Pierre Blondy
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Résumé

reversible semiconductor-to-metal transition (SMT) of vanadium-dioxide thin films integrated on coplanar waveguides. We designed, simulated, and fabricated devices, which can be reversibly driven from a low-loss (<; 0.7 dB) transmission state into an attenuating state (> 20 dB) as the VO2 material is changing from semiconductor to the metal state when the incident MW power exceeds a threshold value. These devices are broadband and present a tunable threshold power value. They could be easily integrated as protection circuits from excess power in a large variety of MW components.
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Dates et versions

hal-00567204 , version 1 (18-02-2011)

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Julien Givernaud, Aurelian Crunteanu, Jean-Christophe Orlianges, Arnaud Pothier, Corinne Champeaux, et al.. Microwave Power Limiting Devices Based on the Semiconductor-Metal Transition in Vanadium-Dioxide Thin Films. IEEE Transactions on Microwave Theory and Techniques, 2010, 58, pp.2352-2361. ⟨10.1109/TMTT.2010.2057172⟩. ⟨hal-00567204⟩
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