Reactive deposition of Al-N coatings in Ar/N2 atmospheres using pulsed-DC or high power impulse magnetron sputtering discharges - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Vacuum Année : 2010

Reactive deposition of Al-N coatings in Ar/N2 atmospheres using pulsed-DC or high power impulse magnetron sputtering discharges

Résumé

In this paper, the metal to ceramic transition of the AleN2 system was investigated using classical reactive pulsed-DC magnetron sputtering and HIgh Power Impulse Magnetron Sputtering (HIPIMS) at a constant average current of 3 A. Optical emission spectroscopy measurements revealed more ionised aluminium species in the HIPIMS discharge compared to pulsed-DC sputtering. It also showed excited N0 and ionised Nþ species in reactive Ar/N2 HIPIMS discharges. The corresponding evolution of the consumed nitrogen flow as a function of the N2 partial pressure revealed that a higher amount of reactive gas is needed to achieve stoichiometric AlN with HIPIMS. Electron probe micro-analysis and X-ray diffraction measurements confirmed that a partially poisoned aluminium target is enough to allow the deposition of stoichiometric hcp-AlN thin films via HIPIMS. To go further in the comparison of both processes, two stoichiometric hexagonal aluminium nitride thin films have been deposited. High power impulse magnetron sputtered hcp-AlN exhibits a higher nano-hardness (18 GPa) than that of the coating realised with conventional pulsed-DC sputtering (8 GPa).

Dates et versions

hal-00567187 , version 1 (18-02-2011)

Identifiants

Citer

A. Guillaumot, F. Lapostolle, Christelle Dublanche-Tixier, J.C. Oliveira, Alain Billard, et al.. Reactive deposition of Al-N coatings in Ar/N2 atmospheres using pulsed-DC or high power impulse magnetron sputtering discharges. Vacuum, 2010, 85, pp.120-125. ⟨10.1016/j.vacuum.2010.04.012⟩. ⟨hal-00567187⟩
57 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More