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Communication Dans Un Congrès Année : 2010

94GHz silicon co-integrated LNA and antenna in a mm-wave dedicated BiCMOS technology

Résumé

A co-integrated Low Noise Amplifier (LNA) with a dipole antenna is designed considering a millimeter-wave dedicated BiCMOS technology. The targeted application is a 94 GHz passive imaging for security applications. The LNA is based on a high-speed SiGe:C 130 nm HBT. The interest of the co-integration on a common silicon substrate is demonstrated through the decrease of insertion losses between the antenna and the amplifier. The capability of the BiCMOS9MW technology is illustrated to achieve this co-integration reaching a total gain of 3.0 dB (Gantenna + GLNA) for a power consumption of 11 mW, in a single-stage LNA configuration. A two-stage configuration achieves a total gain of 8.5 dB with a power consumption of 21 mW.
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Dates et versions

hal-00565823 , version 1 (14-02-2011)

Identifiants

Citer

Romain Pilard, Daniel Gloria, Frederic Gianessello, François Le Pennec, Christian Person. 94GHz silicon co-integrated LNA and antenna in a mm-wave dedicated BiCMOS technology. RFIC 2010: IEEE Radio frequency Integrated Circuits Symposium, May 2010, Anaheim, United States. pp.83 - 86, ⟨10.1109/RFIC.2010.5477390⟩. ⟨hal-00565823⟩
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