Epitaxial refractory-metal buffer layers with a chemical gradient for adjustable lattice parameter and controlled chemical interface
Résumé
We have developed and characterized the structure and composition of nanometers-thick solid-solution epitaxial layers of (V,Nb) on sapphire (11-20), displaying a continuous lateral gradient of composition from one to another pure element. Further covered with an ultrathin pseudomorphic layer of W, these provide a template for the fast combinatorial investigation of any growth or physical property depending of strain.
| Origine | Fichiers produits par l'(les) auteur(s) |
|---|