Electronic structure of indium selenide probed by magnetoabsorption spectroscopy under high pressure - Archive ouverte HAL
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2010

Electronic structure of indium selenide probed by magnetoabsorption spectroscopy under high pressure

Résumé

We report on an investigation of the peculiar electronic structure of the layered semiconductor InSe by magneto-optical experiments under high pressure up to 5 GPa. Magneto-absorption spectroscopy is performed under pulsed magnetic field up to 53 T using a specific setup. Excitonic magnetofingerprints and high-field oscillatory magnetoabsorption yield significant details on the band structure. In addition, the application of an external pressure unveils phenomena that confirm the specific k . p model proposed for this compound on the basis of earlier measurements.

Dates et versions

hal-00555164 , version 1 (12-01-2011)

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Citer

Marius Millot, Jean-Marc Broto, Sylvie George, J. Gonzalez, A. Segura. Electronic structure of indium selenide probed by magnetoabsorption spectroscopy under high pressure. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81, pp.205211. ⟨10.1103/PhysRevB.81.205211⟩. ⟨hal-00555164⟩
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