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Journal Articles Applied Physics Letters Year : 2011

Laser emission with excitonic gain in a ZnO planar microcavity

Abstract

The lasing operation of a ZnO planar microcavity under optical pumping is demonstrated from T=80 K to 300 K. At the laser threshold, the cavity switches from the strong coupling to the weak coupling regime. A gain-related transition, which appears while still observing polariton branches and, thus, with stable excitons, is observed below 240K. This shows that exciton scattering processes, typical of II-VI semiconductors, are involved in the gain process.
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Dates and versions

hal-00554480 , version 1 (10-01-2011)
hal-00554480 , version 2 (05-04-2011)
hal-00554480 , version 3 (31-05-2011)

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Thierry Guillet, Christelle Brimont, Pierre Valvin, Bernard Gil, Thierry Bretagnon, et al.. Laser emission with excitonic gain in a ZnO planar microcavity. Applied Physics Letters, 2011, 98 (211105), pp.3. ⟨10.1063/1.3593032⟩. ⟨hal-00554480v3⟩
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