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Communication Dans Un Congrès Année : 2010

Deep structural analysis of novel BGaN material layers grown by MOVPE

T. Moudakir
  • Fonction : Auteur
M. Abid
K. Pantzas
L. Largeau
O. Mauguin
A. Ougazzaden

Résumé

BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated through HAADF-STEM. At low boron content, 0.7%, no compositional fluctuations were observed with XRD or STEM measurements. Photoluminescence at room temperature was measured. At higher boron content, cubic BGaN nano-sized clusters were identified. The clusters are 3 nm wide, homogeneously distributed in size and in density and coherent with the surrounding wurtzite BGaN matrix. Their boron composition was estimated by EDX.

Dates et versions

hal-00554350 , version 1 (10-01-2011)

Licence

Paternité - Pas d'utilisation commerciale

Identifiants

Citer

S. Gautier, G. Patriarche, T. Moudakir, M. Abid, G. Orsal, et al.. Deep structural analysis of novel BGaN material layers grown by MOVPE. ICMOVPE XV, Jun 2010, Lake Tahoe, United States. ⟨10.1016/j.jcrysgro.2010.08.042⟩. ⟨hal-00554350⟩
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