Conference Papers
Year : 2010
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https://hal.science/hal-00549981
Submitted on : Thursday, December 23, 2010-10:18:15 AM
Last modification on : Friday, March 24, 2023-2:52:54 PM
Cite
S. Bouzid, Virginie Hoel, N. Defrance, H. Maher, F. Lecourt, et al.. AlGaN/GaN HEMT on Si (111) substrate for millimeter microwave power applications. 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Slovakia. pp.111-114, ⟨10.1109/ASDAM.2010.5666316⟩. ⟨hal-00549981⟩
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